Node :
Université McGill – McGill Electron Microscopy Research Group
Manufacturer and model : Flat ion milling Hitachi IM-3000
External website : McGill
Contact person : Nicolas Brodusch; Stéphanie Bessette; Lise Guichaoua
Part of RQMÉM : no
Address M.H. Wong Building, 3610, University Street, Montreal, QC H3A 0C5
Broad Ion Beam Flat Milling system used for sample preparation for scanning electron microscopy (SEM). It removes fine scratches and surface damage on pre-polished samples without applying mechanical stress.
Specifications :
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Argon beam of 1 to 6 keV for a limited ion implantation and high pulverisation rate.
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Produces smooth and flat surfaces with roughness values typically below 0.2 nm Ra.
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Variable beam inclinations allows access to hard-to-reach surfaces. Tilt angle adjustable from 0 to 88 degrees.
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High acceleration speeds for rapid material removal, while minimizing thermal damage.
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Imagerie In situ imaging unit for real-time monitoring.
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Ion beam current ranges from 50 to 100 µA, depending on the accelerating voltage.
Applications :
For flat milling of pre-polished samples. Ideal for metals and alloys before ECCI or EBSD. This system can process a wide range of materials including metals, semi-conductors, ceramics, as well as insulators. For a simple and efficient surface preparation.